By R. M. Marston (Auth.)
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Additional info for 110 Semiconductor Projects for the Home Constructor
T. ~ +=25 V (= max drain-to-source voltage). += 25 V (= max drain-to-gate voltage). - 25 V (= max gate-to-source voltage). = = - 8V m x (= a gate-to-source voltage needed to cut off/^). 2-20 mA(= drain-to-source current with V = 0). gs = - 2nA mx (= a gate cut-off (leakage) current at 25°C). = 1 0 mA (= max gate current). 5 mmho (= small signal common source forward transconductance). ~ 8 pFmax ( common source short-circuit input capacitance). ~ 200 m W mx (= a power dissipation, in free air). = 1 0 0 MHz (= gain-bandwidth product).
P r e v e n t s excessive base c u r r e n t s flowing in Q2. As well as acting as a s m o o t h i n g c a p a c i t o r , C also i m p a r t s a t i m e 2 delay t o t h e o n / o f f o p e r a t i o n of t h e circuit; t h e d u r a t i o n of this delay d e p e n d s o n t h e values of b o t h C a n d t h e relay coil resistance. L o n g 2 or s h o r t o p e r a t i n g p e r i o d s c a n be o b t a i n e d b y increasing or decreasing t h e value of C , t o suit individual r e q u i r e m e n t s .
9 9 . , t o 1,000 MSI. s gate i m p e d a n c e , a n d w o r k s o u t at a b o u t 5 0 0 MSI s h u n t e d by. 10 p F . 110 SEMICONDUCTOR PROJECTS 41 If t h e high effective value of source l o a d ( a n d t h u s t h e high i n p u t i m p e d a n c e ) of t h i s circuit is t o be m a i n t a i n e d , t h e o u t p u t m u s t either b e t a k e n t o e x t e r n a l circuits via a n a d d i t i o n a l e m i t t e r follower, or t a k e n o n l y t o fairly high i m p e d a n c e l o a d s .
110 Semiconductor Projects for the Home Constructor by R. M. Marston (Auth.)